ISO 14237:2000, Surface chemical analysis – Secondary-ion mass spectrometry – Determination of boron atomic concentration in silicon using uniformly doped materials
ISO 14237:2000, Surface chemical analysis – Secondary-ion mass spectrometry – Determination of boron atomic concentration in silicon using uniformly doped materials
Last Updated on Thursday, 12 May 2011 12:18 Written by Administrator Thursday, 12 May 2011 12:18
ISO 14237:2000, Surface chemical analysis – Secondary-ion mass spectrometry – Determination of boron atomic concentration in silicon using uniformly doped materials
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 × 1016 atoms/cm3 to 1 × 1020 atoms/cm3.
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Tags: 142372000, Analysis, Atomic, boron, Chemical, concentration, Determination, doped, Mass, Materials, Secondaryion, silicon, Spectrometry, Surface, uniformly, Using